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silicon carbide technology parameter

type:other related products

  • overview
  • specifications
  • features

 

 

direct bonding sic

compact sic

 

w(f.c)%

 

 

≤1

 

 

≤1

 

 

w(fe2o3

 

 

≤0.2

 

 

≤0.2

 

pressure resisting(mpa)

 

 

≥229

 

≥300

 

 

bending strength(mpa)

 

≥50

 

≥60

 

 

1400℃ bending strength(mpa)

 

≥60

 

≥70

 

bulk density(g/cm3)

 

 

≥2.71

 

≥3.4

 

apparent porosity(%)

 

 

≤15

 

≤1.5

 

1000℃ thermal conductive

 

 

≥27

 

≥45

case

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